Shielded Gate Trench MOSFET

Shielded gate trench MOSFET can dramatically reduce both dynamic parasitic capacitance and on-resistance leading to higher efficiencies and smalle chip size. Chip size reduces up to 40% compared to the conventional trench MOSFET under the same power dissipation. Newly developed device structure and mask layout can enhance the robustness of MOSFET and reduce the chip area. In addition, the unique design of the process reduces the number of process steps and masks lead to the lower production cost of products.

JSAB’s products are suitable for a wide range of consumer type applications including portable electronics, toys, battery packs, and power motors.