屏蔽栅沟槽型场效应管

Shielded-Gate Trench MOSFET

通过屏蔽栅沟槽技术减小场效应晶体管的寄生电容及导通电阻，从而提升芯片性能及减小芯片面积，與传统沟槽型场效应管相比在同一功耗下芯片面积减少超过４成。独特的器件结构和掩膜版图设计提升了产品的耐用度和减小了芯片面积而另外独特的工艺流程设计则减少了工艺步骤和掩膜版的数目，从而减低了产品的生产成本，使产品在价格上更有竞争力。
产品的应用目标是所有消费类产品的马达控制，如近年来拥有一个快速增长市场的遥控无人飞机。

产品目录

Part No.Product
Family
Package
Type/Die		Config-
uration		Pola-
rity		VDSVGSVGS(th)
RDS(ON)@2.5V
RDS(ON)@4.5VRDS(ON)@10VQgQgd
Min.Max.Typ.Max.Typ.Max.Typ.Max.Typ.Typ.
[V][V] [V] [V] [mΩ] [mΩ] [mΩ] [mΩ] [mΩ] [mΩ] [nC] [nC]
JMV3708NASGT
DFN 3.3x3.3
Single
N
25±100.4
1.22.5
3.21.72.2-
-
28.16.6
JMT3801N
SGT
DFN 3.3x3.3
Single
N
25±100.4
1.2-
-
9.812-
-
8.92.2
JMV3809N
SGT
DFN 3.3x3.3
Single
N
25±100.4
1.213179.011.7-
-
5.51.3
JMV4708ND
SGT
DFN 3.3x3.3Single
N
30
±20
1
2
-
-
2.93.71.92.429.55.5
JMM4708N
SGT
DFN 5x6
Single
N
30
±20
1
2
-
-
3.14.02.12.729.55.5
JMM4708ND
SGT
DFN 5x6
Single
N
30
±20
1
2
-
-
33.822.529.55.5
JMM4808NSGT
DFN 5x6
Single
N
30
±20
1
2
-
-
3.34.22.32.929.55.5
JMV4808N
SGT
DFN 3.3x3.3
Single
N
30
±20
1
2
-
-
3.64.62.63.329.55.5
JMD4808N
SGT
TO-252
Single
N
30
±20
1
2
-
-
3.74.72.73.429.55.5
JMV4812N
SGT
DFN 3.3x3.3
Single
N
30±20
1
2
-
-
6.584.1517.43.1
JMD4812N
SGT
TO-252
Single
N
30±20
1
2
-
-
7.18.94.76.117.43.1
JMS4710N

SGT
DFN 3x3

Dual

N
30±20
1
2
-
-
13.317.28.310.78.81.8
±20
1
2
-
-
10.914.16.98.910.92.2
JMM5770NSGTDFN 5x6SingleN
40±20
1
2
-
-
1.41.81.11.49718
JMM5770NDSGTDFN 5x6SingleN
40±20
1
2
-
-
1.41.81.11.49718
JMM5771NSGTDFN 5x6SingleN
40±20
1
2-
-
2.12.533.9-
-
JMM6715NSGT
DFN 5x6SingleN
60±20
1.22.2-
-
3.4
4.4
2.42.95412
JMM6715NDSGTDFN 5x6Single
N60±20
1.22.2-
-
3.4
4.4
2.42.954
12

 

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