场截止沟槽型绝缘栅双极性晶体管

Field-Stop Trench IGBT

通过独特的沟槽栅设计，降低晶体管的寄生电容，加快开关速度，降低器件开关时的电磁干扰噪声及开关损耗。利用先进的薄片加工工艺实现独特的场截止型结构设计，进一步降低芯片损耗，提升芯片性能。独特的加工工艺流程设计降低了工艺难度，减少工艺步骤，从而压低生产成本，提升产品的市场竞争力。
产品的首要应用目标为各类硬开关应用，如消费及工业类产品的电机驱动、开关电源等。此外，亦可对晶体管结构设计做出相应改动，使产品亦可应用于电焊切割、感应加热等软开关应用领域。

产品目录

Part No.


Product
Family		Package
Type/Die		Pola-
rity		VCE

IC (1)

VGE

VGE(th)
VCEsat
Min.Max.Typ.Max.
[V][A][V][V][V][V][V]
JHB10N60EE
IGBT+FRD
TO-263
N
600
10
±20
5.2
7.2
1.45
1.8
JHG10N60EE
IGBT+FRD
TO-220MF
N
600
10
±20
5.2
7.2
1.45
1.8
JHP10N60EE
IGBT+FRD
TO-220
N
600
10
±20
5.2
7.2
1.45
1.8
JHB15N60EE2
IGBT+FRD
TO-263
N
600
15
±20
5.2
7.2
1.7
2
JHG15N60EE2
IGBT+FRD
TO-220MF
N
600
15
±20
5.2
7.2
1.7
2
JHP15N60EE2
IGBT+FRD
TO-220
N
600
15
±20
5.2
7.2
1.7
2
JHB15N60FE
IGBT+FRD
TO-263
N
600
15
±20

5

7
1.5
1.9
JHF15N60FE
IGBT+FRD
TO-220F
N
600
15±20
5
7
1.5
1.9
JHG15N60FE
IGBT+FRD
TO-220MF
N
600
15
±20
5
7
1.5
1.9
JHP15N60FE
IGBT+FRD
TO-220
N
600
15
±20
57
1.5
1.9
JHB20N60FE2
IGBT+FRD
TO-263
N
600
20
±20
57
1.7
2
JHG20N60FE2
IGBT+FRD
TO-220MF
N
600
20
±20
57
1.7
2
JHP20N60FE2
IGBT+FRD
TO-220
N
600
20
±20
57
1.7
2
JHB25N60EE
IGBT+FRD
TO-263
N
600
25
±20
57
1.5
1.8
JHG25N60EE
IGBT+FRD
TO-220MF
N
600
25
±20
57
1.5
1.8
JHH25N60EE
IGBT+FRD
TO-247
N
600
25
±20
57
1.5
1.8
JHP25N60EE
IGBT+FRD
TO-220
N
600
25
±20
57
1.5
1.8
JHB30N60EE2
IGBT+FRD
TO-263
N
600
30
±20
57
1.6
1.9
JHG30N60EE2
IGBT+FRD
TO-220MF
N
60030
±20
57
1.6
1.9
JHH30N60EE2
IGBT+FRD
TO-247
N
60030
±20
57
1.6
1.9
JHP30N60EE2
IGBT+FRD
TO-220
N
60030
±20
57
1.6
1.9
JHH15N120FA
IGBT+FRD
TO-247
N
1200
15

±20
5.5
7.5
1.52
JHH25N120FA
IGBT+FRD
TO-247
N
1200
25±20
5.5
7.5
1.5
2
JHH40N120FA
IGBT+FRD
TO-247
N
1200
40±20
5.5
7.5
1.5
2
JHH40N120FA2
IGBT+FRD
TO-247
N
1200
40±20
5.5
7.5
1.75

2.1
JHH40N120DA
IGBT+FRD
TO-247
N
1200
40±20
5.5
7.5
1.6
1.95

 

如有任何查询，请填写下表：